FF200R12MT4BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FF200R12MT4BOMA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
10
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
10
JESD-30 Code
R-XUFM-X10
Qualification Status
Not Qualified
Number of Elements
2
Configuration
2 Independent
Case Connection
ISOLATED
Power - Max
1050W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Turn On Time
190 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 200A
Turn Off Time-Nom (toff)
600 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
14nF @ 25V
RoHS Status
RoHS Compliant
FF200R12MT4BOMA1 Product Details
FF200R12MT4BOMA1 Description
FF200R12MT4BOMA1 is a 1200v EconoDUAL?2 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC. The transistor FF200R12MT4BOMA1 can be applied in motor drives, and UPS systems applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FF200R12MT4BOMA1 is in the tray package with 1050W power dissipation.