FF225R17ME4B11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF225R17ME4B11BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
11
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X11
Number of Elements
2
Configuration
2 Independent
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
1500W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
340A
Turn On Time
350 ns
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 225A
Turn Off Time-Nom (toff)
1500 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
18.5nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6
$147.47667
$884.86002
FF225R17ME4B11BOSA1 Product Details
FF225R17ME4B11BOSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.