FF400R33KF2CB3NOSA1 Description

FF400R33KF2CB3NOSA1 is a 3300v IGBT. The transistor FF400R33KF2CB3NOSA1 can be applied in  Automotive, Infotainment & cluster, Communications equipment, Datacom module, Personal electronics, and Connected peripherals & printers due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FF400R33KF2CB3NOSA1 is with 4kW power dissipation.

FF400R33KF2CB3NOSA1 Features

Continuous DC collector current:660A

Total power dissipation: TC=25℃: 4kW

Gate-emitter peak voltage: ±20V

Turn-off energy loss per pulse: 470mJ

Continuous DC forward current: 400A

FF400R33KF2CB3NOSA1 Applications

Automotive 

Infotainment & cluster 

Communications equipment 

Datacom module 

Personal electronics 

Connected peripherals & printers