FF450R12ME4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FF450R12ME4BOSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Published
2013
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
11
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
11
JESD-30 Code
R-XUFM-X11
Qualification Status
Not Qualified
Number of Elements
2
Configuration
Half Bridge
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
2250W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
675A
Turn On Time
290 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 450A
Turn Off Time-Nom (toff)
740 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
28nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$56.393280
$56.39328
10
$53.201208
$532.01208
100
$50.189818
$5018.9818
500
$47.348885
$23674.4425
1000
$44.668760
$44668.76
FF450R12ME4BOSA1 Product Details
FF450R12ME4BOSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.