FF450R12ME4PB11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF450R12ME4PB11BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
11
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X11
Number of Elements
2
Configuration
2 Independent
Case Connection
ISOLATED
Turn On Delay Time
190 ns
Polarity/Channel Type
N-CHANNEL
Input
Standard
Turn-Off Delay Time
490 ns
Collector Emitter Voltage (VCEO)
1.2kV
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
1.75V
Turn On Time
290 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 450A
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
450A
Turn Off Time-Nom (toff)
740 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
28nF @ 25V
Height
17.5mm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6
$183.17667
$1099.06002
FF450R12ME4PB11BOSA1 Product Details
FF450R12ME4PB11BOSA1 Description
The FF450R12ME4PB11BOSA1 is an EconoDUAL? 3 1200 V, 450 A dual IGBT module with TRENCHSTOP? IGBT4, Emitter Controlled HE Diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.