APTGT600U170D4G

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Manufacturer part number:APTGT600U170D4G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 1700V 1100A 2900W D4

Case Package:SOT-23

Datasheet:APTGT600U170D4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	D4
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2012
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	2.9kW
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	2900W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	1.1kA
Current - Collector Cutoff (Max)	1mA
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Current - Collector (Ic) (Max)	1100A
Input Capacitance	51nF
Turn On Time	430 ns
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 600A
Turn Off Time-Nom (toff)	1230 ns
IGBT Type	Trench Field Stop
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	51nF @ 25V
RoHS Status	RoHS Compliant