BSM150GB170DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM150GB170DN2HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Published
1999
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
Max Power Dissipation
1.25kW
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Configuration
Half Bridge
Case Connection
ISOLATED
Power - Max
1250W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
3.9V
Max Collector Current
220A
Current - Collector Cutoff (Max)
1.5mA
Collector Emitter Breakdown Voltage
1.7kV
Voltage - Collector Emitter Breakdown (Max)
1700V
Input Capacitance
20nF
Turn On Time
720 ns
Vce(on) (Max) @ Vge, Ic
3.9V @ 15V, 150A
Turn Off Time-Nom (toff)
1310 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
20nF @ 25V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$157.479899
$157.479899
10
$152.301644
$1523.01644
25
$151.242943
$3781.073575
50
$150.191602
$7509.5801
100
$147.102450
$14710.245
500
$136.585376
$68292.688
BSM150GB170DN2HOSA1 Product Details
BSM150GB170DN2HOSA1 Description
BSM150GB170DN2HOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes BSM150GB170DN2HOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.