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FP50R12KE3BOSA1

FP50R12KE3BOSA1

FP50R12KE3BOSA1

Infineon Technologies

FP50R12KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FP50R12KE3BOSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Number of Pins 24
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 35
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 35
JESD-30 Code R-XUFM-X35
Number of Elements 7
Configuration Single
Power Dissipation 270W
Case Connection ISOLATED
Power - Max 280W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 75A
Turn On Time 135 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 50A
Turn Off Time-Nom (toff) 610 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 3.5nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $112.46000 $112.46
FP50R12KE3BOSA1 Product Details

FP50R12KE3BOSA1                         DESCRIPTION



An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.

 

FP50R12KE3BOSA1                       Applications

·Motor Drives

·Servo Drives

·UPS Systems

·Wind Turbines

 

FP50R12KE3BOSA1                       Features

·Low VCEsat

·Tvjop=150℃

 

Mechanical Features

·Standard Housing


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