FF600R12ME4BOSA1

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FF600R12ME4BOSA1

Manufacturer part number:FF600R12ME4BOSA1

Manufacturer:Infineon Technologies

Description:FF600R12ME4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:FF600R12ME4BOSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	52 Weeks
Mount	Screw
Mounting Type	Chassis Mount
Package / Case	Module
Number of Pins	11
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C
Published	2002
Pbfree Code	no
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	11
JESD-30 Code	R-XUFM-X7
Qualification Status	Not Qualified
Number of Elements	2
Configuration	2 Independent
Element Configuration	Dual
Power Dissipation	4.05kW
Case Connection	ISOLATED
Power - Max	4050W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	600A
Current - Collector Cutoff (Max)	3mA
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	310 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 600A
Turn Off Time-Nom (toff)	770 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	37nF @ 25V
RoHS Status	RoHS Compliant