APTGT75TDU120PG

new-10%

Manufacturer part number:APTGT75TDU120PG

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 1200V 100A 350W SP6P

Case Package:SOT-23

Datasheet:APTGT75TDU120PG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	6
Transistor Element Material	SILICON
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	21
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Max Power Dissipation	350W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	21
JESD-30 Code	R-XUFM-X21
Operating Temperature (Max)	150°C
Number of Elements	6
Configuration	Triple, Dual - Common Source
Case Connection	ISOLATED
Power - Max	350W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	100A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	5.34nF
Turn On Time	335 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	Trench Field Stop
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	5.34nF @ 25V
RoHS Status	RoHS Compliant