FF600R12ME4CB11BOSA1

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FF600R12ME4CB11BOSA1

Manufacturer part number:FF600R12ME4CB11BOSA1

Manufacturer:Infineon Technologies

Description:FF600R12ME4CB11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:FF600R12ME4CB11BOSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Screw
Mounting Type	Chassis Mount
Package / Case	Module
Number of Pins	11
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C
Published	2002
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	11
ECCN Code	EAR99
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	2
Configuration	2 Independent
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	4050W
Transistor Application	POWER CONTROL
Halogen Free	Not Halogen Free
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	1.06kA
Current - Collector Cutoff (Max)	3mA
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	1060A
Power Dissipation-Max (Abs)	4050W
Turn On Time	300 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 600A
Turn Off Time-Nom (toff)	710 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	37nF @ 25V
VCEsat-Max	2.1 V
RoHS Status	RoHS Compliant
Lead Free	Contains Lead