FF650R17IE4DB2BOSA1 Description

FF650R17IE4DB2BOSA1 is a single IGBT with a break down voltage of 1700V from Infineon Technologies. FF650R17IE4DB2BOSA1 operates between -40°C~150°C, and its Current - Collector (Ic) (Max) is 320A. The FF650R17IE4DB2BOSA1 has 3 pins and it is available in Module packaging way. FF650R17IE4DB2BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

FF650R17IE4DB2BOSA1 Features

• Voltage - Collector Emitter Breakdown (Max): 1700V

• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A

• Input Capacitance (Cies) @ Vce: 54nF @ 25V

• Current - Collector Cutoff (Max): 5mA

FF650R17IE4DB2BOSA1 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial