FS225R12KE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS225R12KE4BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Series
EconoPACK™+
Pbfree Code
no
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
29
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
29
JESD-30 Code
R-XUFM-X29
Qualification Status
Not Qualified
Number of Elements
6
Configuration
Full Bridge
Case Connection
ISOLATED
Power - Max
1100W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
320A
Turn On Time
220 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 225A
Turn Off Time-Nom (toff)
600 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
13nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$552.113570
$552.11357
10
$533.958965
$5339.58965
25
$530.247235
$13256.180875
50
$526.561305
$26328.06525
100
$515.730955
$51573.0955
500
$478.858826
$239429.413
FS225R12KE4BOSA1 Product Details
FS225R12KE4BOSA1 Description
FS225R12KE4BOSA1 developed by Infineon Technologies belongs to the family of EconoPACK?+B series modules with trench/fieldstopIGBT4 and optimized emitter-controlled high-efficiency diode. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.