FF75R12RT4HOSA1                              Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

FF75R12RT4HOSA1                               Applications

·High Power Converters

·Motor Drives

·UPS Systems

FF75R12RT4HOSA1                               Features

·Extended Operation Temperature Tyjop

·Low Switching Losses

·Low VCEsat

·Tvjop=150℃

·VCEsat with positiveTemperature Coefficient

Mechanical Features

·lsolated Base Plate

·Standard Housing