FF900R12IP4VBOSA1 Description

The FF900R12IP4VBOSA1 is a 1200 V, 900 A dual IGBT module, PrimePACK?2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC. The abbreviated version of an insulated-gate bipolar transistor is IGBT, which is a power semiconductor die. A grouping of numerous IGBT power semiconductor dies in one physical package is known as an IGBT power module.

FF900R12IP4VBOSA1 Features

• Electrical Features

• Low VCEsat

• Unbeatable Robustness

• VCEsat with positive Temperature Coefficient

• Extended Operation Temperature Tvjop

• High DC Stability

• High Short Circuit Capability, Self Limiting Short Circuit Current

• Mechanical Features

• High Creepage and Clearance Distances

• High Power and Thermal Cycling Capability

• High Power Density

• Substrate for Low Thermal Resistance

• 4 kV AC 1min Insulation

• Package with CTI>400

FF900R12IP4VBOSA1 Applications

• Commercial Agriculture Vehicles

• Air conditioners

• Refrigerators

• Electric cars

• As a switch