FP100R07N3E4BOSA1                             Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

 FP100R07N3E4BOSA1                             Applications

·Motor Drives

FP100R07N3E4BOSA1                             Features

·Increased blocking voltage capability to 650V

·High Short Circuit Capability,Self Limiting Short Circuit Current

·Trench IGBT 4·Top=150°℃

·VCEsat with positive Temperature Coefficient

Mechanical Features

·Integrated NTC temperature sensor·Copper Base Plate

·Solder Contact Technology·Standard Housing