FP15R12W1T7B11BOMA1                          Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

FP15R12W1T7B11BOMA1                            Features

? Electrical features

- TRENCHSTOPTM IGBT7

- Overload operation up to 175°C

- Low VCEsat

? Mechanical features

- PressFIT contact technology

- 2.5 kV AC 1 min insulation

- Al2O3

 substrate with low thermal resistance

- Compact design

- High power density

FP15R12W1T7B11BOMA1                         Applications

? Auxiliary inverters

? Motor drives

? Air conditioning