APT45GP120J

new-10%

Manufacturer part number:APT45GP120J

Manufacturer:Microsemi Corporation

Description:IGBT MOD 1200V 75A 329W ISOTOP

Case Package:SOT-23

Datasheet:APT45GP120J Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Number of Pins	4
Weight	30.000004g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	1999
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	329W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	75A
Pin Count	4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	75A
Current - Collector Cutoff (Max)	500μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.3V
Input Capacitance	3.94nF
Turn On Time	47 ns
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 45A
Continuous Collector Current	75A
Turn Off Time-Nom (toff)	230 ns
IGBT Type	PT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.94nF @ 25V
Gate-Emitter Thr Voltage-Max	6V
Height	9.6mm
Length	38.2mm
Width	25.4mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free