FP25R12KT3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP25R12KT3BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
24
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
24
JESD-30 Code
R-XUFM-X24
Qualification Status
Not Qualified
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
155W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
40A
Turn On Time
140 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 25A
Turn Off Time-Nom (toff)
610 ns
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
1.8nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$137.104010
$137.10401
10
$129.343406
$1293.43406
100
$122.022081
$12202.2081
500
$115.115171
$57557.5855
1000
$108.599218
$108599.218
FP25R12KT3BOSA1 Product Details
FP25R12KT3BOSA1 Description
FP25R12KT3BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FP25R12KT3BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.