FP35R12KT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP35R12KT4BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Number of Pins
23
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
23
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
23
Qualification Status
Not Qualified
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
210W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
35A
Turn On Time
210 ns
Vce(on) (Max) @ Vge, Ic
2.25V @ 15V, 35A
Turn Off Time-Nom (toff)
620 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
2nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$79.941860
$79.94186
10
$75.416850
$754.1685
100
$71.147971
$7114.7971
500
$67.120728
$33560.364
1000
$63.321441
$63321.441
FP35R12KT4BOSA1 Product Details
FP35R12KT4BOSA1 Description
FP35R12KT4BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FP35R12KT4BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.