FP50R06W2E3B11BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP50R06W2E3B11BOMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
23
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
23
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
175W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
65A
Current - Collector Cutoff (Max)
1mA
Current - Collector (Ic) (Max)
65A
Turn On Time
45 ns
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 50A
Turn Off Time-Nom (toff)
355 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
3.1nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
15
$47.52467
$712.87005
FP50R06W2E3B11BOMA1 Product Details
FP50R06W2E3B11BOMA1 Description
FP50R06W2E3B11BOMA1 is a 600v EasyPIM?2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode. The FP50R06W2E3B11BOMA1 can be applied in Automotive, Infotainment & cluster, Industrial, Appliances, Personal electronics, and Gaming due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FP50R06W2E3B11BOMA1 is in the tray package with 175W Power dissipation.
FP50R06W2E3B11BOMA1 Features
Collector-emitter voltage Tvj = 25°C: 600v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 65A