IXGN82N120B3H1

new-10%

Manufacturer part number:IXGN82N120B3H1

Manufacturer:IXYS

Description:IGBT MOD 1200V 145A 595W SOT227B

Case Package:SOT-23

Datasheet:IXGN82N120B3H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2009
Series	GenX3™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	ULTRA FAST, LOW CONDUCTION LOSS, UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	595W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	595W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	3.2V
Max Collector Current	145A
Current - Collector Cutoff (Max)	50μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	7.9nF
Turn On Time	112 ns
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 82A
Turn Off Time-Nom (toff)	760 ns
IGBT Type	PT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	7.9nF @ 25V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant