FP50R12N2T4B16BOSA1 Description

FP50R12N2T4B16BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FP50R12N2T4B16BOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 1400A. The FP50R12N2T4B16BOSA1 has 12 pins and it is available in Module packaging way. FP50R12N2T4B16BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

FP50R12N2T4B16BOSA1 Features

• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1400A

• Input Capacitance (Cies) @ Vce: 82nF @ 25V 

• Voltage - Collector Emitter Breakdown (Max): 1200V

• Operating Temperature: -40°C~150°C

• Current - Collector Cutoff (Max): 5mA

FP50R12N2T4B16BOSA1 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial