FP35R12KT4B16BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP35R12KT4B16BOSA1 Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~150°C
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Three Phase Inverter
Power - Max
210W
Input
Three Phase Bridge Rectifier
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
70A
Vce(on) (Max) @ Vge, Ic
2.25V @ 15V, 35A
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
2nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$104.111148
$104.111148
10
$98.218064
$982.18064
100
$92.658551
$9265.8551
500
$87.413728
$43706.864
1000
$82.465781
$82465.781
FP35R12KT4B16BOSA1 Product Details
FP35R12KT4B16BOSA1 Description
FP35R12KT4B16BOSA1 developed by Infineon Technologies is a type of IGBT module which is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.