FS100R07N3E4B11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS100R07N3E4B11BOSA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
35
ECCN Code
EAR99
Additional Feature
UL APPROVED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X35
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
335W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
100A
Turn On Time
100 ns
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 100A
Turn Off Time-Nom (toff)
370 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
6.2nF @ 25V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$96.20000
$96.2
500
$95.238
$47619
1000
$94.276
$94276
1500
$93.314
$139971
2000
$92.352
$184704
2500
$91.39
$228475
FS100R07N3E4B11BOSA1 Product Details
FS100R07N3E4B11BOSA1 Description
The FS100R07N3E4B11BOSA1 is an EconoPIM? 3 650 V, 100 A three-phase IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology.
FS100R07N3E4B11BOSA1 Features
Increased blocking voltage capability to 650 V
High short circuit capability, self-limiting short circuit current