FS100R12KT4GB11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS100R12KT4GB11BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
35
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X35
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
515W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
100A
Turn On Time
165 ns
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 100A
Turn Off Time-Nom (toff)
570 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
6.3nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$143.48600
$1434.86
FS100R12KT4GB11BOSA1 Product Details
FS100R12KT4GB11BOSA1 Description
FS100R12KT4GB11BOSA1 developed by Infineon Technologies is a type of EconoPACK?3 module PressFIT with trench/fieldstop IGBT4 and emitter controlled4 diode. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of power transistor (Giant Transistor-GTR) and power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.