FZ1200R17HP4B2BOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ1200R17HP4B2BOSA2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X7
Number of Elements
2
Configuration
Half Bridge
Case Connection
ISOLATED
Power - Max
7800W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
1200A
Turn On Time
850 ns
Vce(on) (Max) @ Vge, Ic
2.25V @ 15V, 1200A
Turn Off Time-Nom (toff)
1810 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
97nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2
$933.27500
$1866.55
FZ1200R17HP4B2BOSA2 Product Details
FZ1200R17HP4B2BOSA2 Description
FZ1200R17HP4B2BOSA2 is a type of IHM-B module with a Trench/Fieldstop IGBT4 and emitter-controlled diode. It is able to deliver low switching losses and low VCEsat. It is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. Based on its specific characteristics, the FZ1200R17HP4B2BOSA2 IGBT module provides optimum performance for resonant inverter applications, high-power converters, traction drives, and wind turbines.