FS100R12KT4GPBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FS100R12KT4GPBPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Surface Mount
NO
Transistor Element Material
SILICON
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
35
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Reach Compliance Code
compliant
JESD-30 Code
R-XUFM-X35
Operating Temperature (Max)
150°C
Number of Elements
6
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Case Connection
ISOLATED
Polarity/Channel Type
N-CHANNEL
Turn On Time
165 ns
Turn Off Time-Nom (toff)
570 ns
Collector-Emitter Voltage-Max
1200V
FS100R12KT4GPBPSA1 Product Details
FS100R12KT4GPBPSA1 Description
FS100R12KT4GPBPSA1 is a 1200V EconoPACK?3 module with trench/field stop IGBT4 and Emitter Controlled4 diode. The transistor FS100R12KT4GPBPSA1 can be applied in Automotive, Body electronics & lighting, Communications equipment, Datacom module, Industrial, and Appliance applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FS100R12KT4GPBPSA1 is in the tray package with 515W Power dissipation.
FS100R12KT4GPBPSA1 Features
Continuous DC collector current TC = 95°C, Tvj max = 175°C: 100A
Total power dissipation TC = 25°C, Tvj max = 175°C: 515W
Gate-emitter peak voltage: ±20V
Repetitive peak forward current: 200A
The temperature under switching conditions: -40 to 150℃