DL2G50SH6N

new-10%

Manufacturer part number:DL2G50SH6N

Manufacturer:MagnaChip Semiconductor

Description:DL2G50SH6N datasheet pdf and Transistors - IGBTs - Modules product details from MagnaChip Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:DL2G50SH6N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Typical Collector Emitter Saturation Voltage (V)	2.1
Maximum Collector-Emitter Voltage (V)	600
Maximum Power Dissipation (mW)	240000
Maximum Gate Emitter Voltage (V)	±20
Maximum Continuous Collector Current (A)	75
Maximum Gate Emitter Leakage Current (uA)	0.1
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	150
Supplier Package	Case 6DM-2
Military	No
Mounting	Through Hole
Package Height	34
Package Length	66
Package Width	8.15(Max)
PCB changed	6
Part Status	Obsolete
Pin Count	6
Configuration	Dual
Channel Type	N
RoHS Status	Supplier Unconfirmed