FS150R17PE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS150R17PE4BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
13
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
20
JESD-30 Code
R-XUFM-X13
Qualification Status
Not Qualified
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
835W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
150A
Turn On Time
280 ns
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 150A
Turn Off Time-Nom (toff)
1240 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
13.5nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6
$233.68500
$1402.11
FS150R17PE4BOSA1 Product Details
FS150R17PE4BOSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
FS150R17PE4BOSA1 Applications
? UPSsystems
? Highpowerconverters
? Motordrives
? Windturbines
FS150R17PE4BOSA1 Features
? 500-mA low-dropout regulator with enable
? Available in fixed and adjustable (1.2-V to 5.5-V)