FP30R06W1E3BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FP30R06W1E3BOMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
23
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
23
ECCN Code
EAR99
Max Power Dissipation
115W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
23
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
115W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
37A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.55V
Turn On Time
42 ns
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 30A
Turn Off Time-Nom (toff)
245 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
1.65nF @ 25V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$25.868560
$25.86856
10
$24.404302
$244.04302
100
$23.022926
$2302.2926
500
$21.719742
$10859.871
1000
$20.490322
$20490.322
FP30R06W1E3BOMA1 Product Details
FP30R06W1E3BOMA1 Description
FP30R06W1E3BOMA1 is a single IGBT with a break down voltage of 600V from Infineon Technologies. FP30R06W1E3BOMA1 operates between -40°C~150°C, and its Current - Collector (Ic) (Max) is 37A. The FP30R06W1E3BOMA1 has 3 pins and it is available in Module packaging way. FP30R06W1E3BOMA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.