FP50R12KT4GBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP50R12KT4GBOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
35
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
35
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
35
Number of Elements
7
Polarity
NPN
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
280W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
50A
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Turn On Time
107 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 50A
Turn Off Time-Nom (toff)
630 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
2.8nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$108.24500
$1082.45
FP50R12KT4GBOSA1 Product Details
FP50R12KT4GBOSA1 Description
The FP50R12KT4GBOSA1 is an EconoPIM?3 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC. Power may be turned on and off quickly and with excellent energy efficiency using an IGBT power module, which serves as a switch. Due to its capacity to improve switching, temperature, weight, and cost performance, IGBT power modules are increasingly used as the preferred technology for high-power applications.