FS35R12W1T4B11BOMA1 Description

FS35R12W1T4B11BOMA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FS35R12W1T4B11BOMA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 65A. The FS35R12W1T4B11BOMA1 has 18 pins and it is available in Module packaging way. FS35R12W1T4B11BOMA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

FS35R12W1T4B11BOMA1 Features

• Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A

• Voltage - Collector Emitter Breakdown (Max): 1200V

• Turn Off Time-Nom (toff): 520 ns

• Configuration: Three Phase Inverter

FS35R12W1T4B11BOMA1 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial