FD600R06ME3S2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FD600R06ME3S2BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
11
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
9
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X9
Number of Elements
1
Configuration
Single
Case Connection
ISOLATED
Power - Max
2250W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Current - Collector Cutoff (Max)
400nA
Current - Collector (Ic) (Max)
600A
Turn On Time
275 ns
Vce(on) (Max) @ Vge, Ic
1.6V @ 15V, 600A
Turn Off Time-Nom (toff)
960 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
60nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$155.49400
$1554.94
FD600R06ME3S2BOSA1 Product Details
FD600R06ME3S2BOSA1 Description
FD600R06ME3S2BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FD600R06ME3S2BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.