FS450R17KE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS450R17KE4BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Series
EconoPACK™+
Pbfree Code
no
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
29
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
29
JESD-30 Code
R-XUFM-X29
Qualification Status
Not Qualified
Number of Elements
6
Configuration
Full Bridge
Case Connection
ISOLATED
Power - Max
2500W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
600A
Turn On Time
380 ns
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 450A
Turn Off Time-Nom (toff)
1600 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
36nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FS450R17KE4BOSA1 Product Details
FS450R17KE4BOSA1 Description
FS450R17KE4BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FS450R17KE4BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.