FS100R17KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS100R17KE3BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
35
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
35
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
35
Qualification Status
Not Qualified
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
555W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.7kV
Max Collector Current
145A
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Turn On Time
450 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 100A
Turn Off Time-Nom (toff)
1100 ns
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
9nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$162.18600
$1621.86
FS100R17KE3BOSA1 Product Details
FS100R17KE3BOSA1 Description
FS100R17KE3BOSA1 is a 1700v IGBT-Modules. The FS100R17KE3BOSA1 can be applied in Communications equipment, Datacom modules, Industrial, Lighting, Enterprise systems, and Enterprise projectors applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FS100R17KE3BOSA1 is in the tray package with 555W Power dissipation.
FS100R17KE3BOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1700v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 145A