FS600R07A2E3B32BOSA1 Description

FS600R07A2E3B32BOSA1 is a 650v IGBT. The transistor FS600R07A2E3B32BOSA1 can be applied in  Automotive Applications, Hybrid Electrical Vehicles (H) EVs, Commercial Agriculture Vehicles, and Motor drive due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FS600R07A2E3B32BOSA1 is in the Tray package with 20mW power dissipation.

FS600R07A2E3B32BOSA1 Features

Increased blocking voltage capability to 650V

High Current Density

Low inductive design

Low Switching Losses

Trench IGBT 3

Tvj op= 150°C

VcEsat with a positive Temperature Coefficient

FS600R07A2E3B32BOSA1 Applications

Automotive Applications

Hybrid Electrical Vehicles (H)EV

Commercial Agriculture Vehicles

Motor Drives