FS75R12KE3_B3 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FS75R12KE3_B3 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
36
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
34
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
34
JESD-30 Code
R-XUFM-X34
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
355W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
100A
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Power Dissipation-Max (Abs)
355W
Turn On Time
340 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 75A
Turn Off Time-Nom (toff)
610 ns
IGBT Type
NPT
NTC Thermistor
Yes
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
5.3nF @ 25V
VCEsat-Max
2.15 V
Radiation Hardening
No
RoHS Status
RoHS Compliant
FS75R12KE3_B3 Product Details
FS75R12KE3_B3 Description
The IGBT Power Module FS75R12KE3 _B3 from Infineon Technologies combines the high-speed switching performance of a power MOSFET with the high-voltage/high-current handling capabilities of a bipolar transistor.
FS75R12KE3_B3 Features
Outstanding performance at high-frequency operation
Direct mounting to the heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for Easy PCB mounting