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FS75R12KE3B9BOSA1

FS75R12KE3B9BOSA1

FS75R12KE3B9BOSA1

Infineon Technologies

FS75R12KE3B9BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS75R12KE3B9BOSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 26
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 26
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Number of Elements 6
Configuration Three Phase Inverter
Power Dissipation 355W
Case Connection ISOLATED
Power - Max 355W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 105A
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 340 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 5.3nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
10 $109.26900 $1092.69
FS75R12KE3B9BOSA1 Product Details

FS75R12KE3B9BOSA1 Description

 

FS75R12KE3B9BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FS75R12KE3B9BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

FS75R12KE3B9BOSA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FS75R12KE3B9BOSA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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