FS75R12KE3B9BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS75R12KE3B9BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
26
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
26
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Number of Elements
6
Configuration
Three Phase Inverter
Power Dissipation
355W
Case Connection
ISOLATED
Power - Max
355W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
105A
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
1.7V
Turn On Time
340 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 75A
Turn Off Time-Nom (toff)
610 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
5.3nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$109.26900
$1092.69
FS75R12KE3B9BOSA1 Product Details
FS75R12KE3B9BOSA1 Description
FS75R12KE3B9BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FS75R12KE3B9BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.