FS75R12KT4B15BOSA1 Description

FS75R12KT4B15BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FS75R12KT4B15BOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 75A. The FS75R12KT4B15BOSA1 has 28 pins and it is available in Module packaging way. FS75R12KT4B15BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

FS75R12KT4B15BOSA1 Features

• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A

• Input Capacitance (Cies) @ Vce: 4.3nF @ 25V

• Voltage - Collector Emitter Breakdown (Max): 1200V

• Operating Temperature: -40°C~150°C TJ

• JESD-30 Code: R-XUFM-X28

FS75R12KT4B15BOSA1 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial