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FS75R12W2T4BOMA1

FS75R12W2T4BOMA1

FS75R12W2T4BOMA1

Infineon Technologies

FS75R12W2T4BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS75R12W2T4BOMA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 18
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 15
ECCN Code EAR99
Max Power Dissipation 375W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 33
JESD-30 Code R-XUFM-X15
Qualification Status Not Qualified
Number of Elements 6
Configuration Full Bridge
Power Dissipation 375W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 107A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.15V
Turn On Time 185 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A
Turn Off Time-Nom (toff) 490 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 4.3nF @ 25V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $120.477780 $120.47778
10 $113.658283 $1136.58283
100 $107.224795 $10722.4795
500 $101.155467 $50577.7335
1000 $95.429686 $95429.686
FS75R12W2T4BOMA1 Product Details

FS75R12W2T4BOMA1 Description


FS75R12W2T4BOMA1 is a 1200v IGBT-Modules. The FS75R12W2T4BOMA1 can be applied in Air Conditioning, Motor Drives, Servo Drives, and UPS Systems applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FS75R12W2T4BOMA1 is in the tray package with 375W Power dissipation.



FS75R12W2T4BOMA1 Features


Low Switching Losses

Trench IGBT 4

Vcesat with positive Temperature Coefficient

Low VCcEsat

Mechanical Features

Al2O3 Substrate with Low Thermal Resistance

Compact design

Solder Contact Technology

Rugged mounting due to integrated mounting clamps



FS75R12W2T4BOMA1 Applications


Air Conditioning

Motor Drives

Servo Drives

UPS Systems


Related Part Number

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