FS75R12W2T7B11BOMA1

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Manufacturer part number:FS75R12W2T7B11BOMA1

Manufacturer:Infineon Technologies

Description:FS75R12W2T7B11BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:FS75R12W2T7B11BOMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Chassis Mount
Package / Case	Module
Operating Temperature	-40°C~175°C
Series	EasyPACK™
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Configuration	Full Bridge
Power - Max	20mW
Input	Standard
Current - Collector Cutoff (Max)	13μA
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	65A
Vce(on) (Max) @ Vge, Ic	1.55V @ 15V, 75A (Typ)
IGBT Type	Trench Field Stop
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	15.1nF @ 25V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$75.48000	$75.48
500	$74.7252	$37362.6
1000	$73.9704	$73970.4
1500	$73.2156	$109823.4
2000	$72.4608	$144921.6
2500	$71.706	$179265

FS75R12W2T7B11BOMA1 Description

FS75R12W2T7B11BOMA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FS75R12W2T7B11BOMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FS75R12W2T7B11BOMA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FS75R12W2T7B11BOMA1 Applications

ISM applications

DC large signal applications

Power factor correction

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