APTGLQ100A65T1G

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Manufacturer part number:APTGLQ100A65T1G

Manufacturer:Microsemi Corporation

Description:APTGLQ100x Series 650 V 200 A High Speed Trench + Field Stop IGBT4 Power Module

Case Package:SOT-23

Datasheet:APTGLQ100A65T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	SP1
Number of Pins	1
Operating Temperature	-40°C~175°C TJ
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	350W
Number of Elements	1
Configuration	Half Bridge
Turn On Delay Time	19 ns
Power - Max	350W
Input	Standard
Turn-Off Delay Time	197 ns
Collector Emitter Voltage (VCEO)	2.3V
Max Collector Current	200A
Current - Collector Cutoff (Max)	100μA
Collector Emitter Breakdown Voltage	650V
Input Capacitance	6nF
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 100A
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	6nF @ 25V
RoHS Status	RoHS Compliant
Lead Free	Lead Free