FS75R17KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS75R17KE3BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2012
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
35
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
35
JESD-30 Code
R-XUFM-X35
Qualification Status
Not Qualified
Number of Elements
6
Configuration
Full Bridge
Case Connection
ISOLATED
Power - Max
465W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
130A
Turn On Time
450 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 75A
Turn Off Time-Nom (toff)
1100 ns
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
6.8nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$136.00300
$1360.03
FS75R17KE3BOSA1 Product Details
FS75R17KE3BOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.
FS75R17KE3BOSA1 Applications
·Auxiliary inverters
·Motor drives
·Servo drives
FS75R17KE3BOSA1 Features
·Low VcEsat
·Tjop=150°℃
·Trench IGBT 4
·VCEsatwith positive temperature coefficient
Mechanical Features
·AlzO3 substrate with low thermal resistance
·High power and thermal cycling capability*Integrated NTC temperature sensor