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FZ1000R33HE3BOSA1

FZ1000R33HE3BOSA1

FZ1000R33HE3BOSA1

Infineon Technologies

FZ1000R33HE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FZ1000R33HE3BOSA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Pbfree Code no
Part Status Active
Number of Terminations 7
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Reach Compliance Code compliant
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration Single Switch
Case Connection ISOLATED
Power - Max 1600W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector (Ic) (Max) 1000A
Power Dissipation-Max (Abs) 9600W
Turn On Time 1150 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 100A
Turn Off Time-Nom (toff) 3550 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 190nF @ 25V
VCEsat-Max 3.1 V
RoHS Status RoHS Compliant
FZ1000R33HE3BOSA1 Product Details

FZ1000R33HE3BOSA1 Description


IHM-B Modul with Fast IGBT3 and Emitter Controlled 3 Diode



FZ1000R33HE3BOSA1 Features


  • Base plate made of AlSiC for improved thermal cycling

  • Package a CTI of at least 600

  • Housing IHM B

  • Unattached base plate



FZ1000R33HE3BOSA1 Applications


  • Chopper software

  • Converters for medium voltage

  • Drives of motors

  • Traction motors

  • UPS devices

  • Wind generators


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