FZ1200R17HE4HOSA2                          Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

FZ1200R17HE4HOSA2                          Applications

·High power converters

·Motor drives

Electrical Features

·Extended operating temperature Tvjop

·Low switching losses

·Low VCEsat

·Tvjop=150℃

FZ1200R17HE4HOSA2                           Features

·4kVAC 1min insulation

·Package with CTI>400

·High creepage and clearance distances

·High power density

·IHM B housing

·Copper base plate