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FZ1500R33HE3C1NPSA1

FZ1500R33HE3C1NPSA1

FZ1500R33HE3C1NPSA1

Infineon Technologies

FZ1500R33HE3C1NPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FZ1500R33HE3C1NPSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~150°C TJ
Part Status Active
Configuration Full Bridge
Power - Max 2400000W
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector (Ic) (Max) 1500A
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 1.5kA
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 280nF @ 25V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $99999.99999 $99999.99999
500 $98999.9999901 $49499999.99505
1000 $97999.9999902 $97999999.9902
1500 $96999.9999903 $145499999.98545
2000 $95999.9999904 $191999999.9808
2500 $94999.9999905 $237499999.97625
FZ1500R33HE3C1NPSA1 Product Details

FZ1500R33HE3C1NPSA1                      Description


IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

 

FZ1500R33HE3C1NPSA1                      Applications

·High Power Converters

·Motor Drives

·UPS Systems

 

FZ1500R33HE3C1NPSA1                       Features

·Extended Operation Temperature Tyjop

·Low Switching Losses

·Low VCEsat

·Tvjop=150

·VCEsat with positiveTemperature Coefficient

 

Mechanical Features

·lsolated Base Plate

·Standard Housing


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