FZ1500R33HE3C1NPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ1500R33HE3C1NPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~150°C TJ
Part Status
Active
Configuration
Full Bridge
Power - Max
2400000W
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
3300V
Current - Collector (Ic) (Max)
1500A
Vce(on) (Max) @ Vge, Ic
3.1V @ 15V, 1.5kA
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
280nF @ 25V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$99999.99999
$99999.99999
500
$98999.9999901
$49499999.99505
1000
$97999.9999902
$97999999.9902
1500
$96999.9999903
$145499999.98545
2000
$95999.9999904
$191999999.9808
2500
$94999.9999905
$237499999.97625
FZ1500R33HE3C1NPSA1 Product Details
FZ1500R33HE3C1NPSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.