MII100-12A3

new-10%

Manufacturer part number:MII100-12A3

Manufacturer:IXYS

Description:Trans IGBT Module N-CH 1.2KV 135A 7-Pin Y4-M5

Case Package:SOT-23

Datasheet:MII100-12A3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Chassis Mount, Panel, Screw
Mounting Type	Chassis Mount
Package / Case	Y4-M5
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2000
Pbfree Code	yes
Part Status	Active
Number of Terminations	7
ECCN Code	EAR99
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	560W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	135A
Base Part Number	MII
Number of Elements	2
Configuration	Half Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Turn On Delay Time	100 ns
Transistor Application	MOTOR CONTROL
Rise Time	50ns
Polarity/Channel Type	N-CHANNEL
Input	Standard
Turn-Off Delay Time	650 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	135A
Current - Collector Cutoff (Max)	5mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Reverse Voltage	1.2kV
Collector Emitter Saturation Voltage	2.2V
Input Capacitance	5.5nF
Turn On Time	150 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 75A
Turn Off Time-Nom (toff)	700 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	5.5nF @ 25V
VCEsat-Max	3 V
Height	30mm
Length	94mm
Width	34mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free