FZ1500R33HL3BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ1500R33HL3BPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
42 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
9
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X9
Number of Elements
3
Configuration
Full Bridge
Case Connection
ISOLATED
Power - Max
17000W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
3300V
Current - Collector (Ic) (Max)
1500A
Turn On Time
1050 ns
Vce(on) (Max) @ Vge, Ic
2.85V @ 15V, 1500A
Turn Off Time-Nom (toff)
4700 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
6nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2,090.67000
$2
FZ1500R33HL3BPSA1 Product Details
FZ1500R33HL3BPSA1 Description
IHV B 3300 V, 1500 A 190 mm single-switch IGBT Module with TRENCHSTOP? IGBT 3, low switching losses and Emitter Controlled diode - The experienced solution for traction and your medium voltage drives applications.
FZ1500R33HL3BPSA1 Features
High DC stability
High short circuit capability
Self limiting short curcuit current
Low switching losses
Unbeatable robustness
Tvj op = 150°C
Low VCEsat with positive Temperature coefficient
AlSiC Base Plate for increased Thermal Cycling Capability