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APTGT75H60T1G

APTGT75H60T1G

APTGT75H60T1G

Microsemi Corporation

IGBT MODULE 600V 100A 250W SP1

SOT-23

APTGT75H60T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 36 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 12
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Terminal Position UPPER
Terminal Form THROUGH-HOLE
Pin Count 12
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 250W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 4.62nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 75A
Turn Off Time-Nom (toff) 310 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.62nF @ 25V
VCEsat-Max 1.9 V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $45.01240 $4501.24

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